| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| PHI214-20EL PH1214-20EL |
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
1200-1400 MHz,20 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics
MA-Com
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| PH2729-110M PH2729-11OM |
Radar Pulsed Power Transistor锛?110W
Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
|
Tyco Electronics
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| PH3134-9L PTI3134-9L |
Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.1A I(C)
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10% Duty 3.1 - 3.4 GHz
|
Tyco Electronics
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 1011LD110 |
RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| PH1090-175L PH1090-175 PH1090 |
Avionics Pulsed Power Transistor175 Watts锛?1030-1090MHz
Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250ms Pulse,
Avionics Pulsed Power Transistor - 175 Watts 1030-1090 MHz 250ms Pulse
Avionics Pulsed Power Transistor175 Watts1030-1090MHz
|
MACOM[Tyco Electronics]
|
